PECVD graphite is a high-performance graphite component specifically engineered for plasma-enhanced chemical vapor deposition (PECVD) processes. Manufactured from ultra-high purity, fine-grained graphite, it provides excellent thermal stability, uniform conductivity, and low impurity levels critical for contamination-sensitive environments. Its optimized microstructure ensures consistent plasma interaction and uniform film deposition across substrates. With low thermal expansion and strong resistance to thermal shock, PECVD graphite maintains dimensional integrity under rapid temperature cycling. Optional surface coatings further enhance oxidation resistance and lifespan. Widely used in semiconductor manufacturing and thin-film deposition systems, it ensures precise process control, repeatability, and long-term operational reliability.
Grade
Bulk Density (g/cm³)
Electric Resistivity (μΩ·m)
Compressive Strength (MPa)
Flexural Strength (MPa)
Shore Hardness
Ash Content (ppm)
Purified Ash: Graphitization (ppm)
Purified Ash: Product (ppm)
Coeff. of Thermal Expansion (*10⁻⁶/°C)
Thermal Conductivity W/(m·K)
Young's Modulus (GPa)
Applications
CDI-1A
1.85
10-13
90
45
60
300
50
5
5.5
133
11.5
Semiconductor, Heat zone in PV Industry, Ceramic Sintering, Vacuum furnace
CDI-1B
1.8
10-13
86
40
55
300
50
5
5.4
121
10
Semiconductor, Heat zone in PV Industry, Ceramic Sintering, Vacuum furnace
CDI-1C
1.82
11-15
100
48
58
300
50
5
5.6
120
10.6
Semiconductor, Heat zone in PV Industry, Ceramic Sintering, Vacuum furnace
CDI-1D
1.75
12-16
80
40
58
300
50
5
5.8
108
10
Semiconductor, Heat zone in PV Industry, Ceramic Sintering, Vacuum furnace